Materials Library
Special thin films and process conditions unavailable in conventional fabs — across oxides, nitrides, and metals.
PVD — Sputter & Evaporator
Semiconductor
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Contact usVO₂ (Vanadium Dioxide)
Specifications
Thin-Film Specifications
- Film-coated by RF magnetron sputtering vacuum < 1.0 × 10⁻⁶ Torr
- Substrate : Si (100)
- Thickness : 150 nm
- Film Crystallinity : (-402) oriented polycrystals
- RMS Roughness : 6.917 nm
- Resistance ON/OFF ratio : > 1.0 × 10⁴
- Transition temperature : < 60 °C
Target Specifications
- Target Material : Vanadium Dioxide (VO2)
- Purity : 99.99%
- Diameter : 4”
Target V₂O₅ (Vanadium Pentoxide)
Detailed data is being prepared. You can still request a quote below.
TiO₂ (Titanium Dioxide)
Specifications
Thin-Film Specifications
- Film-coated by RF magnetron sputtering vacuum < 1.0 × 10⁻⁶ Torr
- Substrate : Si (100)
- Thickness : 150 nm
- Refractive Index (n) : 2.534084 (@ 587 nm) / 2.422304 (@ 1525 nm)
- Extinction Coefficient (k) : 0.000000 (@ 587 nm) / 0.000000 (@ 1525 nm)
Target Specifications
- Target Material : Titanium Dioxide
- Purity : 99.99%
- Diameter : 3”
Target Ta₂O₅ (Tantalum Pentoxide)
Specifications
Thin-Film Specifications
- Film-coated by RF magnetron sputtering vacuum < 1.0 × 10⁻⁶ Torr
- Substrate : Si (100)
- Thickness : 132.4 nm
- Film Crystallinity : Broad amorphous peak
- RMS Roughness : 0.291 nm
- Refractive Index (n) : 2.1367 (@ 587 nm) / 2.067869 (@ 1525 nm)
- Extinction Coefficient (k) : 0.000000 (@ 587 nm) / 0.000000 (@ 1525 nm)
Target Specifications
- Material : Tantalum Pentoxide (Ta2O5)
- Purity : 99.95%
- Diameter : 3”
Target HfO₂ (Hafnium Oxide)
Specifications
Thin-Film Specifications
- Film-coated by RF magnetron sputtering vacuum < 1.0 × 10⁻⁶ Torr
- Substrate : Si (100)
- Thickness : 345.3 nm
- Refractive Index (n) : 2.020440 (@ 587 nm)
- Extinction Coefficient (k) : 0.000000 (@ 587 nm)
Target Specifications
- Target Material : Hafnium Oxide
- Purity : 99.9%
- Diameter : 2”, 3”
Target ZnO (Zinc Oxide)
Specifications
Thin-Film Specifications
- Film-coated by RF magnetron sputtering vacuum < 1.0 × 10⁻⁶ Torr
- Substrate : Si (100)
- Thickness : 85 nm
- Refractive Index (n) : 1.985522 (@ 587 nm)
- Extinction Coefficient (k) : 0.000003 (@ 587 nm)
Target Specifications
- Target Material : Zinc Oxide
- Purity : 99.99%
- Diameter : 2”, 3”
Target ITO (Indium Tin Oxide)
Specifications
Thin-Film Specifications
- Film-coated by RF magnetron sputtering vacuum < 1.0 × 10⁻⁶ Torr
- Substrate : Si (100)
- Thickness : 125 nm
- Sheet resistance : 44 Ω/sq / Resistivity: 5.49E-06 Ω·m
- Transmittance : >90%
- Refractive Index (n) : 1.991928 (@ 587 nm)
- Extinction Coefficient (k) : 0.007197 (@ 587 nm)
Target Specifications
- Target Material : Indium Tin Oxide
- Purity : 99.5%
- Diameter : 3”
Target IGZO (Indium Gallium Zinc Oxide)
Detailed data is being prepared. You can still request a quote below.
Al₂O₃ (Aluminium Oxide)
Detailed data is being prepared. You can still request a quote below.
Ga₂O₃ (Gallium Oxide)
Detailed data is being prepared. You can still request a quote below.
In₂O₃ (Indium Oxide)
Detailed data is being prepared. You can still request a quote below.
NiO (Nickel Oxide)
Specifications
Thin-Film Specifications
- Film-coated by RF magnetron sputtering vacuum < 1.0 × 10⁻⁶ Torr
- Substrate : Si (100)
- Thickness : 50 nm
- Refractive Index (n) : 2.118204 (@ 587 nm)
- Extinction Coefficient (k) : 0.000000 (@ 587 nm)
Target Specifications
- Target Material : Nickel Oxide
- Purity : 99.99%
- Diameter : 3”
Target SiO₂ (Silicon Dioxide)
Specifications
Thin-Film Specifications
- Film-coated by RF magnetron sputtering vacuum < 1.0 × 10⁻⁶ Torr
- Substrate : Si (100)
- Thickness : 107.6 nm
- Film Crystallinity : Broad amorphous peak
- RMS Roughness : 1.238 nm
- Refractive Index (n) : 1.4567 (@ 587 nm)
- Extinction Coefficient (k) : 0.000000 (@ 587 nm)
Target Specifications
- Target Material : Silicon Dioxide (SiO2)
- Purity : 99.9%
- Diameter : 2”, 3”
Target SnO₂ (Tin Dioxide)
Specifications
Thin-Film Specifications
- Film-coated by RF magnetron sputtering vacuum < 1.0 × 10⁻⁶ Torr
- Substrate : Si (100)
- Thickness : 141 nm
- Refractive Index (n) : 1.998737 (@ 587 nm)
- Extinction Coefficient (k) : 0.03812 (@ 587 nm)
Target Specifications
- Target Material : Tin Dioxide
- Purity : 99.5%
- Diameter : 3”
Target TiN (Titanium Nitride)
Specifications
Thin-Film Specifications
Target Specifications
- Target Material : Titanium Nitride (TiN)
- Purity : 99.99%
- Diameter : 2”
Target AlN (Aluminium Nitride)
Detailed data is being prepared. You can still request a quote below.
AlScN (Aluminium Scandium Nitride)
Specifications
Thin-Film Specifications
- Film-coated by RF magnetron sputtering vacuum < 1.0 × 10⁻⁶ Torr
- Substrate : Si, Pt
- Leakage current : < 1×10⁻⁸ A
- Remanent polarization : 101.19 µC·cm⁻²
Target Specifications
- AlScN co-sputtering
- Aluminium Nitride (AlN) target — Purity : 99.95% · Diameter : 3”
- Scandium (Sc) target — Purity : 99.99% · Diameter : 3”
Sc Target 
AlN Target SiNₓ (Silicon Nitride)
Specifications
Thin-Film Specifications
- Film-coated by RF magnetron sputtering vacuum < 1.0 × 10⁻⁶ Torr
- Substrate : Si (100)
- Thickness : 37.035 nm
- Refractive Index (n) : 2.011712 (@ 587 nm) / 2.061467 (@ 1525 nm)
- Extinction Coefficient (k) : 0.000066 (@ 587 nm) / 0.000000 (@ 1525 nm)
Target Specifications
- Target Material : Silicon Nitride
- Purity : 99.99%
- Diameter : 3”
Target NbN (Niobium Nitride)
Detailed data is being prepared. You can still request a quote below.
NbTiN (Niobium Titanium Nitride)
Detailed data is being prepared. You can still request a quote below.
Au (Gold)
Specifications
Thin-Film Specifications
Target Specifications
- Target Material : Gold (Au)
- Purity : 99.99%
- Diameter : 2”
Target Pt (Platinum)
Specifications
Thin-Film Specifications
Target Specifications
- Target Material : Platinum (Pt)
- Purity : 99.95%
- Diameter : 2”
Target Ag (Silver)
Detailed data is being prepared. You can still request a quote below.
Al (Aluminium)
Detailed data is being prepared. You can still request a quote below.
Ti (Titanium)
Specifications
Thin-Film Specifications
Target Specifications
- Target Material : Titanium (Ti)
- Purity : 99.99%
- Diameter : 2”, 3”
Target Cr (Chromium)
Specifications
Thin-Film Specifications
Target Specifications
- Target Material : Chromium (Cr)
- Purity : 99.95%
- Diameter : 3”
Target Ni (Nickel)
Detailed data is being prepared. You can still request a quote below.
Bi (Bismuth)
Detailed data is being prepared. You can still request a quote below.
Mo (Molybdenum)
Specifications
Thin-Film Specifications
Target Specifications
- Target Material : Molybdenum (Mo)
- Purity : 99.95%
- Diameter : 2”
Target Hf (Hafnium)
Specifications
Thin-Film Specifications
Target Specifications
- Target Material : Hafnium (Hf)
- Purity : 99.95%
- Diameter : 2”
Target Sc (Scandium)
Specifications
Thin-Film Specifications
Target Specifications
- Target Material : Scandium (Sc)
- Purity : 99.99%
- Diameter : 3”
Target W (Tungsten)
Specifications
Thin-Film Specifications
Target Specifications
- Target Material : Tungsten (W)
- Purity : 99.95%
- Diameter : 2”
Target Pd (Palladium)
Specifications
Thin-Film Specifications
Target Specifications
- Target Material : Palladium (Pd)
- Purity : 99.99%
- Diameter : 2”
Target Rh (Rhodium)
Specifications
Thin-Film Specifications
Target Specifications
- Target Material : Rhodium (Rh)
- Purity : 99.99%
- Diameter : 2”
Target Te (Tellurium)
Detailed data is being prepared. You can still request a quote below.
Si (Silicon)
Specifications
Thin-Film Specifications
- Film-coated by RF magnetron sputtering vacuum < 1.0 × 10⁻⁶ Torr
- Substrate : Si (100)
- Thickness : 250 nm
- Refractive Index (n) : 4.594714 (@ 587 nm) / 3.727408 (@ 1525 nm)
- Extinction Coefficient (k) : 0.596195 (@ 587 nm) / 0.000000 (@ 1525 nm)
Target Specifications
- Target Material : Silicon (Si)
- Purity : 99.9%
- Diameter : 2”, 3”
Target Al₂O₃ (Aluminium Oxide)
Specifications
Thin-Film Specifications
- Film-coated by thermal ALD process vacuum < 1.0 × 10⁻2 Torr
- Substrate : Si (100)
- Breakdown field : > 7 MV/cm
- Dielectric constant (ε) : > 7
- Refractive Index (n) : 1.666831(@ 587 nm)
- Extinction Coefficient (k) : 0.000000(@ 587 nm)
- Growth per cycle (GPC) : 1.1 Å/cycle
Process Specifications
- Precursor : TMA(Trimethylaluminium)
- Reactant : H2O, O3
- Process Capability : 6-inch, 12-inch
- Temperature Window : 150 ~ 250 °C
- Applications : Gate Dielectric, Surface Passivation, Conformal Dielectric Coating
TMA HfO₂ (Hafnium Oxide)
Specifications
Thin-Film Specifications
- Film-coated by thermal ALD process vacuum < 1.0 × 10⁻2 Torr
- Substrate : Si (100)
- Breakdown field : > 5 MV/cm
- Dielectric constant (ε) : > 20
- Refractive Index (n) : 2.012921(@ 587 nm)
- Extinction Coefficient (k) : 0.000000(@ 587 nm)
- Growth per cycle (GPC) : 1.0 Å/cycle
Process Specifications
- Precursor : TDMAH(Tetrakis(dimethylamino)hafnium(IV))
- Reactant : H2O, O3
- Process Capability : 6-inch, 12-inch
- Temperature Window : 200 ~ 250 °C
- Applications : High-k Gate Dielectric, Capacitor Dielectric, Interfacial Layer
TDMAH ZrO₂ (Zirconium Dioxide)
Detailed data is being prepared. You can still request a quote below.
HZO (Hafnium Zirconium Oxide)
Detailed data is being prepared. You can still request a quote below.
ZnO (Zinc Oxide)
Detailed data is being prepared. You can still request a quote below.
TiO₂ (Titanium Dioxide)
Specifications
Thin-Film Specifications
- Film-coated by thermal ALD process vacuum < 1.0 × 10⁻2 Torr
- Substrate : Si (100)
- Refractive Index (n) : 2.339362(@ 587 nm)
- Extinction Coefficient (k) : 0.004537(@ 587 nm)
- Growth Per Cycle (GPC) : TTIP 0.3 Å/cycle / TDMAT 0.5 Å/cycle
Process Specifications
- Precursor : TTIP(Titanium isopropoxide), TDMAT(Tetrakis(dimethylamido)titanium(IV))
- Reactant : H2O, O3
- Process Capability : 6-inch, 12-inch
- Temperature Window : 100 ~ 250 °C
- Applications : Optical Coating, Photocatalytic Coating, High-k Dielectric
TTIP 
TDMAT In₂O₃ (Indium Oxide)
Detailed data is being prepared. You can still request a quote below.
Ga₂O₃ (Gallium Oxide)
Detailed data is being prepared. You can still request a quote below.
SnO₂ (Tin Dioxide)
Detailed data is being prepared. You can still request a quote below.
SnO (Tin Monoxide)
Detailed data is being prepared. You can still request a quote below.
SiO₂ (Silicon Dioxide)
Detailed data is being prepared. You can still request a quote below.
Pt (Platinum)
Detailed data is being prepared. You can still request a quote below.
Ru (Ruthenium)
Detailed data is being prepared. You can still request a quote below.
CeO₂ (Cerium Oxide)
Detailed data is being prepared. You can still request a quote below.
BaTiO₃ (Barium Titanate)
Detailed data is being prepared. You can still request a quote below.
SrTiO₃ (Strontium Titanate)
Detailed data is being prepared. You can still request a quote below.