VANAM — VANA Materials LAB. VANAM — VANA Materials LAB.
← Back to Technology

Tantalum Pentoxide

Ta₂O₅
Deposition: PVD — Sputter & Evaporator
Category: Oxide
Formula: Ta₂O₅

Tantalum pentoxide (Ta₂O₅) low-loss optical films by RF magnetron sputtering. A 132.4 nm amorphous film shows RMS roughness of just 0.291 nm and n = 2.137 @ 587 nm with zero extinction into the IR — the waveguide material of choice for photonic integrated circuits. Targets: 99.95 %, 3 in.

Specifications

Thin-Film Specifications

Tantalum Pentoxide characterization data 1
Tantalum Pentoxide characterization data 2
Tantalum Pentoxide characterization data 3
Tantalum Pentoxide characterization data 4
Tantalum Pentoxide characterization data 5
  • Film-coated by RF magnetron sputtering vacuum < 1.0 × 10⁻⁶ Torr
  • Substrate : Si (100)
  • Thickness : 132.4 nm
  • Film Crystallinity : Broad amorphous peak
  • RMS Roughness : 0.291 nm
  • Refractive Index (n) : 2.1367 (@ 587 nm) / 2.067869 (@ 1525 nm)
  • Extinction Coefficient (k) : 0.000000 (@ 587 nm) / 0.000000 (@ 1525 nm)

Target Specifications

  • Material : Tantalum Pentoxide (Ta2O5)
  • Purity : 99.95%
  • Diameter : 3”
Tantalum Pentoxide sputtering target Target