Aluminium Oxide
Al₂O₃Deposition: ALD
Category: Oxide
Formula: Al₂O₃
Aluminium oxide (Al₂O₃) by thermal ALD (TMA + H₂O/O₃, 150–250 °C, up to 12-inch). Films show breakdown above 7 MV/cm, ε > 7, n = 1.667 @ 587 nm at 1.1 Å/cycle — the reference conformal dielectric for gate stacks and surface passivation.
Specifications
Thin-Film Specifications
- Film-coated by thermal ALD process vacuum < 1.0 × 10⁻2 Torr
- Substrate : Si (100)
- Breakdown field : > 7 MV/cm
- Dielectric constant (ε) : > 7
- Refractive Index (n) : 1.666831(@ 587 nm)
- Extinction Coefficient (k) : 0.000000(@ 587 nm)
- Growth per cycle (GPC) : 1.1 Å/cycle
Process Specifications
- Precursor : TMA(Trimethylaluminium)
- Reactant : H2O, O3
- Process Capability : 6-inch, 12-inch
- Temperature Window : 150 ~ 250 °C
- Applications : Gate Dielectric, Surface Passivation, Conformal Dielectric Coating