Aluminium Oxide

Al₂O₃

Deposition: ALD

Category: Oxide

Formula: Al₂O₃

Aluminium oxide (Al₂O₃) by thermal ALD (TMA + H₂O/O₃, 150–250 °C, up to 12-inch). Films show breakdown above 7 MV/cm, ε > 7, n = 1.667 @ 587 nm at 1.1 Å/cycle — the reference conformal dielectric for gate stacks and surface passivation.

Specifications

Thin-Film Specifications

Aluminium Oxide Breakdown field — Breakdown field

Aluminium Oxide Dielectric constant — Dielectric constant

Aluminium Oxide Optical constants — Optical constants

Aluminium Oxide Wafer thickness map — Wafer thickness map

Aluminium Oxide TEM image (10 nm) — TEM image (10 nm)

Aluminium Oxide TEM image (200 nm) — TEM image (200 nm)

Film-coated by thermal ALD process vacuum < 1.0 × 10⁻2 Torr
Substrate : Si (100)
Breakdown field : > 7 MV/cm
Dielectric constant (ε) : > 7
Refractive Index (n) : 1.666831(@ 587 nm)
Extinction Coefficient (k) : 0.000000(@ 587 nm)
Growth per cycle (GPC) : 1.1 Å/cycle

Process Specifications

Precursor : TMA(Trimethylaluminium)
Reactant : H2O, O3
Process Capability : 6-inch, 12-inch
Temperature Window : 150 ~ 250 °C
Applications : Gate Dielectric, Surface Passivation, Conformal Dielectric Coating

TMA

Request a quote for this material →