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Aluminium Oxide

Al₂O₃
Deposition: ALD
Category: Oxide
Formula: Al₂O₃

Aluminium oxide (Al₂O₃) by thermal ALD (TMA + H₂O/O₃, 150–250 °C, up to 12-inch). Films show breakdown above 7 MV/cm, ε > 7 and n = 1.667 @ 587 nm — the reference conformal dielectric for gate stacks and surface passivation.

Specifications

Thin-Film Specifications

Aluminium Oxide Breakdown field
Breakdown field
Aluminium Oxide Dielectric constant
Dielectric constant
Aluminium Oxide Optical constants
Optical constants
Aluminium Oxide Cycle test
Cycle test
Aluminium Oxide Al₂O₃ on Si(6in)
Al₂O₃ on Si(6in)
Aluminium Oxide Al₂O₃ on Si(12in)
Al₂O₃ on Si(12in)
Aluminium Oxide Al₂O₃ on Hole substrate
Al₂O₃ on Hole substrate
  • Film-coated by thermal ALD process vacuum < 1.0 × 10⁻2 Torr
  • Substrate : Si (100)
  • Breakdown field : > 7 MV/cm
  • Dielectric constant (ε) : > 7
  • Refractive Index (n) : 1.666831(@ 587 nm)
  • Extinction Coefficient (k) : 0.000000(@ 587 nm)

Process Specifications

  • Precursor : TMA(Trimethylaluminium)
  • Reactant : H2O, O3
  • Process Capability : 6-inch, 12-inch
  • Temperature Window : 150 ~ 250 °C
  • Applications : Gate Dielectric, Surface Passivation, Conformal Dielectric Coating
Aluminium Oxide TMA precursor structure TMA
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