Titanium Dioxide
TiO₂Deposition: ALD
Category: Oxide
Formula: TiO₂
Titanium dioxide (TiO₂) by thermal ALD (TTIP 0.3 Å/cycle or TDMAT 0.5 Å/cycle + H₂O/O₃, 100–250 °C, up to 12-inch). n = 2.339 @ 587 nm — for optical coatings, photocatalytic layers and high-k dielectrics.
Specifications
Thin-Film Specifications
- Film-coated by thermal ALD process vacuum < 1.0 × 10⁻2 Torr
- Substrate : Si (100)
- Refractive Index (n) : 2.339362(@ 587 nm)
- Extinction Coefficient (k) : 0.004537(@ 587 nm)
- Growth Per Cycle (GPC) : TTIP 0.3 Å/cycle / TDMAT 0.5 Å/cycle
Process Specifications
- Precursor : TTIP(Titanium isopropoxide), TDMAT(Tetrakis(dimethylamido)titanium(IV))
- Reactant : H2O, O3
- Process Capability : 6-inch, 12-inch
- Temperature Window : 100 ~ 250 °C
- Applications : Optical Coating, Photocatalytic Coating, High-k Dielectric