이산화 티타늄
TiO₂증착 방식: ALD
분류: 산화물
화학식: TiO₂
열 ALD(TTIP 0.3 Å/cycle 또는 TDMAT 0.5 Å/cycle + H₂O/O₃, 100–250 °C, 최대 12인치)로 성장하는 이산화 티타늄(TiO₂)입니다. 굴절률 2.339 @ 587 nm — 광학 코팅·광촉매층·고유전막에 활용됩니다.
Specifications
Thin-Film Specifications
- Film-coated by thermal ALD process vacuum < 1.0 × 10⁻2 Torr
- Substrate : Si (100)
- Refractive Index (n) : 2.339362(@ 587 nm)
- Extinction Coefficient (k) : 0.004537(@ 587 nm)
- Growth Per Cycle (GPC) : TTIP 0.3 Å/cycle / TDMAT 0.5 Å/cycle
Process Specifications
- Precursor : TTIP(Titanium isopropoxide), TDMAT(Tetrakis(dimethylamido)titanium(IV))
- Reactant : H2O, O3
- Process Capability : 6-inch, 12-inch
- Temperature Window : 100 ~ 250 °C
- Applications : Optical Coating, Photocatalytic Coating, High-k Dielectric