Aluminium Scandium Nitride

Aluminium scandium nitride (AlScN) ferroelectric films by AlN–Sc co-sputtering (vacuum < 1.0 × 10⁻⁶ Torr, Si/Pt substrates). Films show a remanent polarization of 101.19 µC·cm⁻² with leakage below 1 × 10⁻⁸ A — enabling ferroelectric memory and next-generation piezo-MEMS. Targets: AlN 99.95 % + Sc 99.99 %, 3 in.

Thin-Film Specifications

• Film-coated by RF magnetron sputtering vacuum < 1.0 × 10⁻⁶ Torr
• Substrate : Si, Pt
• Leakage current : < 1×10⁻⁸ A
• Remanent polarization : 101.19 µC·cm⁻²

Target Specifications

• AlScN co-sputtering
• Aluminium Nitride (AlN) target — Purity : 99.95% · Diameter : 3”
• Scandium (Sc) target — Purity : 99.99% · Diameter : 3”

Target