Indium Tin Oxide
ITODeposition: PVD — Sputter & Evaporator
Category: Oxide
Formula: ITO
Indium tin oxide (ITO) transparent conductive films by RF magnetron sputtering. A 125 nm film delivers 44 Ω/sq sheet resistance (ρ = 5.49 × 10⁻⁶ Ω·m) with > 90 % transmittance — the workhorse transparent electrode for displays, touch panels and smart glass. Targets: 99.5 %, 3 in.
Specifications
Thin-Film Specifications
- Film-coated by RF magnetron sputtering vacuum < 1.0 × 10⁻⁶ Torr
- Substrate : Si (100)
- Thickness : 125 nm
- Sheet resistance : 44 Ω/sq / Resistivity: 5.49E-06 Ω·m
- Transmittance : >90%
- Refractive Index (n) : 1.991928 (@ 587 nm)
- Extinction Coefficient (k) : 0.007197 (@ 587 nm)
Target Specifications
- Target Material : Indium Tin Oxide
- Purity : 99.5%
- Diameter : 3”
Target