Hafnium Oxide
HfO₂Deposition: ALD
Category: Oxide
Formula: HfO₂
Hafnium oxide (HfO₂) by thermal ALD (TDMAH + H₂O/O₃, 200–250 °C, up to 12-inch). Breakdown above 5 MV/cm with ε > 20 and 1.0 Å/cycle growth — the high-k gate and capacitor dielectric of modern devices.
Specifications
Thin-Film Specifications
- Film-coated by thermal ALD process vacuum < 1.0 × 10⁻2 Torr
- Substrate : Si (100)
- Breakdown field : > 5 MV/cm
- Dielectric constant (ε) : > 20
- Refractive Index (n) : 2.012921(@ 587 nm)
- Extinction Coefficient (k) : 0.000000(@ 587 nm)
- Growth per cycle (GPC) : 1.0 Å/cycle
Process Specifications
- Precursor : TDMAH(Tetrakis(dimethylamino)hafnium(IV))
- Reactant : H2O, O3
- Process Capability : 6-inch, 12-inch
- Temperature Window : 200 ~ 250 °C
- Applications : High-k Gate Dielectric, Capacitor Dielectric, Interfacial Layer
TDMAH